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| BUP 604 IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 604 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4231-A2 Pin 3 E VCE 600V IC 80A Package TO-218 AB VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 80 50 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 160 100 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 75 mJ IC = 50 A, VCC = 50 V, RGE = 25 L = 60 H, Tj = 25 C Power dissipation Ptot 300 W - 55 ... + 150 - 55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-31-1996 BUP 604 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.4 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 3.8 - V VGE = VCE, IC = 0.7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 C VGE = 15 V, IC = 50 A, Tj = 125 C VGE = 15 V, IC = 100 A, Tj = 25 C VGE = 15 V, IC = 100 A, Tj = 125 C Zero gate voltage collector current ICES 300 A nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 6 2600 280 165 - S pF 3600 420 250 VCE = 20 V, IC = 50 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BUP 604 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit ns 60 90 VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Rise time - tr 80 120 VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Turn-off delay time td(off) 320 480 VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Fall time tf 550 780 VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Semiconductor Group 3 Jul-31-1996 BUP 604 Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 80 W A Ptot 240 IC 60 200 50 160 40 120 30 80 20 40 0 0 10 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A t = 2.9s p K/W IC 10 2 10 s ZthJC 10 -1 100 s 10 1 1 ms D = 0.50 10 ms 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 10 0 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-31-1996 BUP 604 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 100 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 100 A 17V 15V 13V 11V 9V 7V IC 80 70 60 50 40 30 20 10 0 0 IC 80 70 60 50 40 30 20 10 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-31-1996 BUP 604 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 50 A 10 3 tdoff tf t t ns tdoff tf ns tr 10 2 tdon 10 2 tr tdon 10 1 0 20 40 60 80 100 A IC 140 10 1 0 20 40 60 80 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 22 10 mWs E 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 A IC 140 Eon Eoff E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 50 A 10 mWs E 8 7 6 Eoff 5 Eon 4 3 2 1 0 0 20 40 60 80 120 RG Semiconductor Group 6 Jul-31-1996 BUP 604 Typ. gate charge VGE = (QGate) parameter: IC puls = 50 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 Ciss C 100 V 300 V 10 0 Coss Crss 10 -1 6 4 2 0 0 10 -2 0 20 40 60 80 100 120 nC 160 5 10 15 20 25 30 Q Gate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 I Csc/I C(90C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 7 Jul-31-1996 BUP 604 Package Outlines Dimensions in mm Weight: 8g Semiconductor Group 8 Jul-31-1996 |
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